http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05218448-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6402b23ab8782152be47b3996e48a4a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate | 1992-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33b189a20fe38b5bf72f8238e225de30 |
| publicationDate | 1993-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05218448-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Summary] [Object] To provide a method of manufacturing a semiconductor device which realizes high-speed operation and high performance while achieving a low temperature process. [Structure] A lower silicon oxide film 2, a silicon nitride film 3, and a polycrystalline silicon film 4 to be a gate electrode 9 are sequentially formed on a semiconductor substrate 1, and then oxygen 7 is ion-implanted into an upper layer portion of the silicon nitride film 3. Then, the semiconductor substrate 1 after the ion implantation is subjected to a low temperature heat treatment to form a silicon oxide film 5 on the upper layer portion of the silicon nitride film 3. |
| priorityDate | 1992-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.