http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05218024-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 1992-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c7fdaafcf47978a4e2c7b19e3a8a1ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de2125b349f5654cb81df6d0224f962e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef2a1b9d04bf7982440f9c9005858a1f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48cab193e4a85beed62274097a45d64e |
| publicationDate | 1993-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05218024-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Abstract] [Purpose] The present invention relates to a method for manufacturing a semiconductor device, and particularly to a method for forming a wiring, and an object thereof is to improve etching efficiency and etching characteristics. [Structure] When the conductive film 3 mainly composed of aluminum and copper deposited on the semiconductor substrate 1 is etched to form the wiring 3a, the conductive film 3 is etched by an etchant containing phosphoric acid, acetic acid and nitric acid. .. Also, The etchant is configured to contain 0.1 volume or more and 1 volume or less of concentrated nitric acid with respect to 15 volumes of phosphoric acid. Further, the temperature of the etchant is set to 40 ° C. or higher and 60 ° C. or lower. |
| priorityDate | 1992-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.