http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05217861-A

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filingDate 1992-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d4bdc0c559816bc10eaf858a8c36c26
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publicationDate 1993-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05217861-A
titleOfInvention Position shift detection method and exposure apparatus
abstract (57) [Summary] [Object] To provide a method and an exposure apparatus for detecting relative displacement between a mask and a wafer with an accuracy of the order of 1 nanometer in an exposure apparatus for microfabrication of a semiconductor. [Structure] Applying the principle of the atomic force microscope, an elastic body supporting the probe is provided on the mask, the tip of the probe is made to face the positioning mark provided on the wafer, and the probe is two-dimensionally positioned on the positioning mark. By performing surface scanning and detecting the amount of displacement from the amount of deformation of the elastic body, the distance between the mask and the wafer in the normal direction and the relative alignment in the lateral direction are performed with an accuracy of the order of 1 nanometer.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006112788-A
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priorityDate 1992-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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