| abstract |
(57) [Abstract] [Purpose] The present invention relates to a dielectric thin film that can be used as a capacitive insulating film of a DRAM and a manufacturing method thereof. By combining and O, a thin film having a small leak current and a high dielectric constant is formed. [Structure] A TiTiO thin film is formed by plasma CVD using titanium chloride, monosilane and N 2 O as source gases. When the flow rates of monosilane and titanium chloride are changed, the dielectric constant and the leak current change greatly, and when the flow rate ratio (SiH 4 / (SiH 4 + TiCl 4 )) is 0.075, the leak current is about 1 × 10 -9 A / cm 2 , Dielectric constant is 2 S, which has about 0, and has excellent characteristics as a capacitive insulating film. An iTiO thin film can be formed. |