http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05216061-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c816fc32dd27be972de4580524778a2f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242cc8d15c771395b920cc7de452da6a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-135 |
| filingDate | 1992-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf25a5e968136a8442f69dd4419f8eb7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86d4c9db5b1d055545d947ee16705722 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c34dae0174b772c03388b1a99e1de9a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f63fecc2afa6705d1e8ba076eedab68f |
| publicationDate | 1993-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05216061-A |
| titleOfInvention | Spatial light modulator and manufacturing method thereof |
| abstract | (57) [Abstract] [Purpose] In a spatial light modulation element including a light modulation layer made of a liquid crystal material that modulates the intensity, phase, or traveling direction of read light according to an applied voltage, reading to the photoconductive layer side. This is to prevent light from leaking effectively and prevent the resolution of the element from deteriorating even when reading light is absorbed. [Structure] A transparent electrode film 2A and a light shielding layer 3 are provided on the surface of a photoconductive layer 1A. A dielectric multilayer film 4, a light modulation layer 8 made of a liquid crystal material, and a transparent electrode film 2B are provided on the light shielding layer 3. Ten Resistivity of 8 Ωcm to 10 10 Ωcm and 10 for light of 600 mm wavelength The light shielding layer 3 is composed of a hydrogenated amorphous silicon film having a light absorption coefficient of 4 cm -1 to 10 5 cm -1 . This hydrogenated amorphous silicon film flows monosilane gas, The substrate temperature is maintained at 120 ° C or lower and the film is formed by the plasma CVD method. |
| priorityDate | 1992-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.