http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05211118-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be92719b856db86c092cc233e9512ca2 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 1992-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a61881d1a7629d44178188170972ecc |
| publicationDate | 1993-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05211118-A |
| titleOfInvention | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
| abstract | (57) [Summary] [Objective] Even when there is some variation in the contact pressure between the surface of the substrate holder and the semiconductor film, crystal grains having a large grain size can be stably obtained in the semiconductor film. [Structure] The semiconductor film 13 of the thin film semiconductor substrate 11 is brought into contact with the tip portion 5 of the substrate holder 1 through a protective layer 14, and in this state, a beam BM is irradiated from the transparent substrate 12 side to heat and melt the semiconductor film 13. .. Even if the region 13a of the semiconductor film 13 is melted at the same time as the other regions 13b and 13c, the heat is radiated faster than the regions 13b and 13c due to the heat conduction to the root part 5. On the other hand, the surfaces 7 and 6a of the substrate holder 1 reflect the heat from the semiconductor film 13 toward the regions 13b and 13c, but the reflected heat from the surface 7 has a predetermined taper angle θ. Since it is inclined, it is added to the regions 13b and 13c in a diffused form, the temperature of the semiconductor film 13 can be increased as it moves away from the region 13a, and recrystallization can gradually progress in the direction away from the region 13a. it can. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004260145-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7655881-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005045209-A |
| priorityDate | 1991-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419544408 |
Total number of triples: 21.