| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-332 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509 |
| filingDate |
1992-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9090d973f2f31251dd4e650e8422762d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d815328798d5ae2a709320f8dd9c1b73 |
| publicationDate |
1993-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H05209279-A |
| titleOfInvention |
Metal film forming apparatus and metal film forming method |
| abstract |
(57) [Abstract] [Purpose] A metal film is formed in a single process with high throughput and low cost. In a metal film forming apparatus for forming a metal film on a substrate, plasma is applied to a reaction chamber, a plurality of first and second electrodes alternately arranged in the reaction chamber, and a first and a second electrode. An energy supply means for supplying electric energy to generate, a heating means for heating a plurality of substrates arranged between the first and second electrodes, and a source gas for forming a metal film in the reaction chamber are provided. And a gas supply unit for supplying, and plasma is generated between the first and second electrodes to form metal films on the plurality of substrates. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013046286-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2013046286-A1 |
| priorityDate |
1991-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |