http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05206099-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9d5ebd9bdc11f7a4b267d7e865d5a84f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C2-02 |
| filingDate | 1992-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c31e40d2f34c3c74fcb4852510e87cb2 |
| publicationDate | 1993-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05206099-A |
| titleOfInvention | Silicon wafer etching method |
| abstract | (57) [Abstract] [Purpose] It is possible to etch a silicon wafer on which patterns such as aluminum electrodes and gold bumps are formed. In etching a silicon wafer in the manufacture of a semiconductor pressure sensor or the like, a borosilicate glass is anodically bonded to a pattern surface to protect it, so that the silicon wafer is etched without the electrode pattern being attacked by an etching solution. |
| priorityDate | 1992-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.