http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05206029-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1992-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5b11f088cb3cd5984ed8d488f2f4d72 |
| publicationDate | 1993-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05206029-A |
| titleOfInvention | Method for planarizing semiconductor crystal substrate |
| abstract | (57) [Abstract] [Purpose] An object of the present invention is to flatten a semiconductor crystal substrate at the atomic level. [Structure] A semiconductor crystal substrate is placed on a susceptor of a reaction vessel equipped with an exhaust system, exhaust is performed while heating this substrate, and a component atom having a first vapor pressure existing in an island shape on the crystal plane. And a component semiconductor crystal having a second vapor pressure lower than the first vapor pressure and having a second vapor pressure lower than the first vapor pressure, the component atom having the first vapor pressure is thermally dissociated and removed. Radicalized alkyl group, In particular, a method for planarizing a semiconductor crystal substrate is characterized in that a methyl group is supplied and reacted with a component atom having a second vapor pressure to remove the component atom having a second vapor pressure. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100778871-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002151489-A |
| priorityDate | 1992-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.