| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate |
1992-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88a81f5614c1ed75a194e4c4c2b0a0b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79e39758184ed341e71569472e3dca9a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_638a1b1bdda2bffc6016cbc8e02fb195 |
| publicationDate |
1993-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H05203983-A |
| titleOfInvention |
Thin film device |
| abstract |
(57) [Summary] [Objective] In the storage capacitor Cadd portion formed by overlapping the transparent pixel electrode ITO1 and the gate line GL in the previous stage, the sacrifice of the aperture ratio is reduced and the disconnection of the transparent pixel electrode layer d1 is compensated. The gate line GL is provided with a recessed notch portion CT, and layers d2 and d3 for compensating the disconnection of the transparent pixel electrode layer d1 are provided so as to cover the notch portion CT. |
| priorityDate |
1992-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |