| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-54 |
| filingDate |
1992-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e18c9a8b9bea3a3069544e919c697d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11f18942d2014161b2e5a00f8a608a10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92ad6f75852431974f3ae06b296ebc3f |
| publicationDate |
1993-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H05195210-A |
| titleOfInvention |
Integrated circuit, manufacturing method thereof, and thin film forming apparatus thereof |
| abstract |
(57) [Abstract] [Purpose] An object of the present invention is to obtain an integrated circuit having improved barrier layer electrical contact and barrier properties. In a large-scale integrated circuit in which a wiring layer 60 is formed on a silicon substrate 62 via a barrier layer 61, the barrier layer 61 is a titanium layer 65 and a dititanium nitride layer from the silicon substrate 62 toward the wiring layer 60. 68 and a titanium nitride layer 67 were formed in this order. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006342371-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4720298-B2 |
| priorityDate |
1992-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |