http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05174587-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6402b23ab8782152be47b3996e48a4a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C17-00 |
| filingDate | 1991-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2da4b39c22454a809a7bc7729538bcaa |
| publicationDate | 1993-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05174587-A |
| titleOfInvention | Electrically erasable non-volatile memory |
| abstract | (57) [Summary] [Object] The present invention relates to an electrically erasable non-volatile memory called, for example, MNOS, MONOS, etc., and an object thereof is to extend the number of rewritable times and the life by devising a read circuit. According to the threshold voltage of the sample cell in the written state and the threshold voltage of the sample cell in the erased state, an intermediate voltage between these threshold voltages is output and applied to the gate of the memory cell. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007257772-A |
| priorityDate | 1991-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID176015 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450646340 |
Total number of triples: 14.