| abstract |
(57) [Summary] [Structure] A memory array of a semiconductor nonvolatile memory device is provided with a drain, a MONOS type nonvolatile memory element, and an MI. A first memory cell 10 in which an S element and a source are sequentially arranged, a source, a MONOS type non-volatile memory element, and M A semiconductor nonvolatile memory device and a writing method thereof, in which second memory cells 14 each having IS elements and drains sequentially arranged are alternately arranged in the direction of a bit line. [Effect] The area of the source region in the semiconductor nonvolatile memory device can be reduced, and the degree of integration can be increased. |