| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4af0df9a26ff4aafde7285cbd8eb12f4 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate |
1991-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8250d1a446c55f0976530965e1b2610
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88d587008ea04084a2384de6b1c8adf3 |
| publicationDate |
1993-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H05160151-A |
| titleOfInvention |
Method of manufacturing thin film transistor |
| abstract |
(57) [Abstract] [Purpose] The present invention provides highly uniform and high-performance poly-SiT. It provides FT. According to the present invention, an amorphous silicon (hereinafter referred to as "a-Si") layer deposited on an insulating substrate is crystallized by irradiation of an excimer laser and polycrystalline silicon (hereinafter referred to as "po"). In the method of manufacturing a thin film transistor, the a-Si layer is crystallized by irradiation of an excimer laser to form a poly-Si layer. A first energy higher than a threshold energy density at which the Si layer is crystallized to become a poly-Si layer and lower than an energy density at which the surface flatness of the poly-Si layer crystallized from the a-Si layer is 40%. Irradiating with density light, and then irradiating with second energy density light capable of melting defects remaining inside the grains and boundaries of the grains of the poly-Si layer formed by the first energy density light. To do. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6982396-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7365358-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7056382-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6656270-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100862542-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-1332418-C
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7223938-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8835801-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6919533-B2 |
| priorityDate |
1991-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |