http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05160040-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-48 |
| filingDate | 1991-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36181c7b5fa34b3caf70bfc35142598b |
| publicationDate | 1993-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05160040-A |
| titleOfInvention | Semiconductor crystal growth apparatus and crystal growth method using the apparatus |
| abstract | (57) [Summary] [Purpose] With regard to the growth of GaAs crystals doped with high-concentration carbon, the purpose is to enable measurement and control of the carbon concentration during the growth stage. [Composition] Ra phonon-plasmon mode was detected by detecting the Raman backscattering spectrum from the growing GaAs crystal. (L -) peak intensity was measured, and the carbon concentration is known this Compare with the peak intensity obtained for the GaAs crystal. L - The peak appears due to holes. Carbon acts as an acceptor in GaAs, and its activation rate is 100%. Therefore, the carbon concentration can be identified from the intensity of the L - peak. This measurement can be performed while crystal growth is being performed, and the GaAs crystal having a desired carbon concentration can be obtained by feeding back to the control of process conditions such as the supply amount of the doping material necessary for crystal growth thereafter. In this way, the carbon concentration is 10 19 to 10 20 cm. The GaAs layer controlled to -3 is used as the base layer of GaAs / AlGaAs HBT. The present invention enables nondestructive evaluation of not only the measurement of carbon concentration but also the quality of crystals in the growth process and the process conditions. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015194391-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109852947-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013543651-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10103288-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109852947-A |
| priorityDate | 1991-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.