http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05158234-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03d0f52bb4069f8a19d70dcfb697c67a |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-022 |
filingDate | 1991-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4eb526dd1ede469835cc80c2e01abf2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45c252583cde8d06ccecefeda60d1649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82d2e7bd7d775c3e6365dd10d40840a1 |
publicationDate | 1993-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H05158234-A |
titleOfInvention | Positive photoresist composition |
abstract | (57) [Abstract] [Objective] Particularly in the manufacture of semiconductor devices, a positive photoresist composition having excellent resolving power, reproducibility of mask dimensions, aspect ratio of sectional shape, verticality of side walls, development latitude, heat resistance, etc. provide. A positive photoresist composition comprises a 1,2-naphthoquinonediazide-5- (and / or-4-) sulfonic acid ester of a polyhydroxy compound represented by the following general formula (I) and an alkali-soluble resin. contains. [Chemical 1] |
priorityDate | 1991-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 228.