http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05152675-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1991-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a11715453e0f45dd79e1a850702992a2 |
| publicationDate | 1993-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05152675-A |
| titleOfInvention | Semiconductor laser |
| abstract | (57) [Abstract] [Purpose] Window structure AlGaInP using natural superlattice In the semiconductor laser, the energy difference between the window and the laser light is increased, and the maximum output value of the laser light is increased. A double hetero structure in which a first conductivity type clad layer, an active layer having a natural superlattice made of GaInP or AlGaInP, and a second conductivity type clad layer are sequentially stacked on a first conductivity type GaAs substrate. In a window structure having a structure, in which a region near the laser light emitting end face of the active layer contains impurity atoms and has a bandgap energy larger than that of the inside, a plane orientation of the first conductivity type GaAs substrate is (00 Inclination from 1) in the [-110] or [1-10] direction is 0 ° or more and 10 ° or less. Due to this inclination of the substrate surface orientation, the energy difference between the laser beam and the window can be increased. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11121877-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07249827-A |
| priorityDate | 1991-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.