| abstract |
(57) [Summary] [Purpose] A high quality ITO film with sufficiently excellent transparency, stable etching characteristics, and good heat resistance is formed stably with the least amount of abnormal discharge during sputtering, the amount of gas adsorption, etc. We provide ITO sintering target with low cost. [Structure] The amount of nitrogen contained is adjusted to 5 ppm or less by incorporating a step of sintering a powder metallurgical raw material containing indium oxide and tin oxide as main components in an oxygen atmosphere, or the density D ( g / cm 3 ) and bulk resistance ρ (m Ωcm) is a) 6.20 ≤ D ≤ 7.23, b) -0.0676D + 0.887 ≥ ρ ≥ -0.0761D + 0.666, which realizes an ITO sintered target "that satisfies the following two equations simultaneously. |