| abstract |
(57) [Abstract] [Objective] A single-crystal Si is used as a semiconductor substrate, and a surface emitting laser and a laser driving circuit are integrally arranged on the single-crystal Si to obtain a large-scale two-dimensional integrated light source. [Structure] On a semiconductor substrate 1 of single crystal Si, a buffer layer 2, such as GaAs, single crystal InP4 and single crystal In x Ga. 1-x As y P 1- y 5 semiconductor multilayer film of the light reflecting layer 3 formed of, The light emitting layer 6 for confining the carriers and causing the recombination light emission, the upper light reflecting layer 9 constitute a surface emitting laser laminated in this order. In addition, a laser driving electronic circuit such as a transistor is integrally formed on the single crystal Si substrate 1 in which the surface emitting laser is laminated. As a result, the lattice mismatch between the single crystal Si and the single crystal InP can be prevented. nP4 and a multilayer film of a single crystal In x Ga 1-x As y P 1-y 5, it can be alleviated. |