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filingDate 1991-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0220a6378a47e3966516371e685c904f
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publicationDate 1993-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05145016-A
titleOfInvention Method for manufacturing capacitive element and dielectric thin film for capacitive element
abstract (57) [Abstract] [Objective] A capacitor having a polycrystalline Si / TiN / TiO structure, maintaining a good interface state, and having a high capacity and a low leakage current is realized. [Structure] After forming TiN 13 on polycrystalline Si 11, TiO 2 film 12 is formed from the surface to the vicinity of the substrate by oxidation such as thermal oxidation.
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