abstract |
(57) [Abstract] [Objective] A capacitor having a polycrystalline Si / TiN / TiO structure, maintaining a good interface state, and having a high capacity and a low leakage current is realized. [Structure] After forming TiN 13 on polycrystalline Si 11, TiO 2 film 12 is formed from the surface to the vicinity of the substrate by oxidation such as thermal oxidation. |