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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-28
filingDate 1991-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76c78c88fd3c295edc96f4b28907608e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a185622081c2b159ecaf194112719152
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publicationDate 1993-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05142188-A
titleOfInvention Multi ion sensor
abstract (57) [Summary] [Objective] To provide a multi-ion sensor that is inexpensive and has excellent stability. [Structure] Using a semiconductor manufacturing technique such as vacuum deposition or screen printing on a silicon substrate or glass substrate, holes are formed and metal electrodes are formed, and the holes are closed with an ion-sensitive film. Substrates are bonded together to form a closed space, and the closed space is filled with an ion-sensitive film. [Effect] Since a multi-ion sensor can be mass-produced by using a semiconductor manufacturing process, an inexpensive sensor is provided, and therefore, it can be disposable. Further, since there is an electrolytic solution between the electrode of silver / silver chloride or the like and the ion-sensitive film and the structure is essentially the same as that of the conventional ion electrode, excellent characteristics comparable to those of the conventional ion electrode can be obtained.
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