http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0513772-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_171750900388cc1eb516511793bdb9e2 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 1991-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f86e07307852bb50589f268d0a5e88f |
| publicationDate | 1993-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0513772-A |
| titleOfInvention | Memory transistor and manufacturing method thereof |
| abstract | (57) [Summary] [Objective] The number of manufacturing steps for a silicon nitride film is small, and a tunnel oxide film is formed simultaneously with other steps and with good controllability. [Structure] A gate electrode 2 made of an impurity diffusion region is formed inside the upper surface of a single crystal silicon substrate 1, a silicon nitride film 3 is formed on the upper surface of the single crystal silicon substrate 1 including the gate electrode 2, and thermal oxidation is performed. , A thick silicon oxide film 4 of about several thousand Å is formed on the upper surface side of the single crystal silicon substrate 1 on both sides of the silicon nitride film 3, and the surface of the silicon nitride film 3 is simultaneously oxidized to form several tens of Å on the surface. An extremely thin tunnel oxide film 5 is formed, and a semiconductor film 6 made of polysilicon or the like is formed on the upper surfaces of the tunnel oxide film 5 and the silicon oxide film 4. As a result, the number of manufacturing steps for the silicon nitride film is smaller than that of the LOCOS method, Further, the tunnel oxide film 5 can be formed simultaneously with another step, that is, the step of forming the thick silicon oxide film 4 and with good controllability. |
| priorityDate | 1991-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.