http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05129556-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 |
filingDate | 1991-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31f50299b4b2bded916d68a9f957fb6e |
publicationDate | 1993-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H05129556-A |
titleOfInvention | Semiconductor memory device |
abstract | (57) [Abstract] [Purpose] To improve the manufacturing yield of a semiconductor memory device having a spare memory cell array. [Configuration] A spare row memory cell array SRMCA and a spare column memory cell array SCMCA are assigned to a substantially central portion of the memory cell array MCA. Memory cell array MC other than the spare memory cells of the memory cell array MCA A 1 to MCA 4 are used for storing normal information. [Effect] Spare memory cell array SRMCA, SCM By forming CA in a region other than the end portion of the memory cell array MCA where defective memory cells are likely to occur, it becomes difficult for defective memory cells to be included in the spare memory cell array, and the yield of dynamic RAM products is improved. To do. |
priorityDate | 1991-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.