http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05129556-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
filingDate 1991-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31f50299b4b2bded916d68a9f957fb6e
publicationDate 1993-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05129556-A
titleOfInvention Semiconductor memory device
abstract (57) [Abstract] [Purpose] To improve the manufacturing yield of a semiconductor memory device having a spare memory cell array. [Configuration] A spare row memory cell array SRMCA and a spare column memory cell array SCMCA are assigned to a substantially central portion of the memory cell array MCA. Memory cell array MC other than the spare memory cells of the memory cell array MCA A 1 to MCA 4 are used for storing normal information. [Effect] Spare memory cell array SRMCA, SCM By forming CA in a region other than the end portion of the memory cell array MCA where defective memory cells are likely to occur, it becomes difficult for defective memory cells to be included in the spare memory cell array, and the yield of dynamic RAM products is improved. To do.
priorityDate 1991-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID193653
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419482457
http://rdf.ncbi.nlm.nih.gov/pubchem/taxonomy/TAXID4684
http://rdf.ncbi.nlm.nih.gov/pubchem/anatomy/ANATOMYID4684

Total number of triples: 17.