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filingDate 1991-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a3af280f816f19d47c9a20fcf7ca04a
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publicationDate 1993-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05129475-A
titleOfInvention Encapsulating material for tab-type semiconductor device and tab-type semiconductor device
abstract (57) [Summary] [Structure] (A) Curable epoxy resin, (B) Curing agent (C) A compound containing a diorganopolysiloxane unit represented by the following formula (1) is added in an amount of the above (A). ), (B) 2 parts by weight or more based on 100 parts by weight of the total amount of the components, (However, in the formula, R 1 and R 2 are each a methyl group, an ethyl group, Phenyl group or hydrogen atom, n is an integer of 1 or more. ) (D) Fused silica is the total amount of the above components (A) and (B) 1 200 parts by weight or more based on 00 parts by weight, and 100 parts by weight or more of the fused spherical silica among them, and the viscosity at 25 ° C. measured at 20 rpm using a BH viscometer is 2000 poises. A sealing material for a tab-type semiconductor device, comprising the following liquid epoxy resin composition. [Effect] Since the film thickness of the encapsulating material can be controlled to be uniform and thin, and the characteristics of the cured film are good, the TAB semiconductor device can be excellently encapsulated, and the encapsulated TAB semiconductor device has high reliability. It is excellent.
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