| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate |
1991-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2809737b2a7ecc20783e7496c5cbb011 |
| publicationDate |
1993-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H05129304-A |
| titleOfInvention |
Structure of bump electrode and manufacturing method thereof |
| abstract |
(57) [Summary] [Object] The present invention realizes high packaging density by forming protruding electrodes on a circuit board by using an anisotropic etching method. [Structure] The circuit board of the present invention is a silicon single crystal substrate 1. Is anisotropically etched to selectively stack the aluminum layer 5. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7387945-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017128020-A |
| priorityDate |
1991-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |