abstract |
(57) [Abstract] [Purpose] Highly reliable electrode wiring of refractory metal or low resistance metal using a tungsten nitride film as an adhesive layer or a barrier layer. [Structure] A tungsten nitride film 3 is formed by a low pressure CVD method using WF 6 , NH 3 , and H 2, and a W film 4 is continuously formed by a low pressure CVD method. |