http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05121356-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 1991-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2052d4596d1306c756eb917598721d73 |
| publicationDate | 1993-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05121356-A |
| titleOfInvention | Wiring formation method |
| abstract | (57) [Abstract] [Purpose] To achieve high barrier properties and low resistance in contact parts having a barrier metal structure. [Structure] The contact hole 4 opened in the SiO 2 interlayer insulating film 3 is sequentially covered with a first Ti layer 5 and a TiN x layer 6, and then the wafer is exposed to an oxidizing atmosphere such as depressurized oxygen and oxygen plasma. Vacuum transfer and leave. By this oxidation treatment, thin TiO x is formed on the surface of the columnar crystal grains of the TiN x layer 6. As the Ny layer is formed, oxygen segregates at the grain boundaries, improving the barrier property. Since TiN x having a low resistance remains inside the crystal grains, the increase in resistivity is suppressed as a whole. Since the wafer is not exposed to the atmosphere in the middle of the process, it is possible to avoid adverse effects due to the adhesion of water to the wafer surface. Then the second Ti A layer 7 is formed to complete the barrier metal 8, Al-1% S The contact hole 4 is filled with the i layer 9. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6007684-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10927453-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100274748-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100396891-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6146998-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6150720-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5858184-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7384866-B2 |
| priorityDate | 1991-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.