http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05121352-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5198a2a21392d6cbc0bb4898b3fb3d29 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate | 1991-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_773b76295dff27ef0d1bc66fce9c7355 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_492bb224b3eace85d2c8a3e26c7a6626 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e7cafd5b22f394c0f830159dd6852a2 |
| publicationDate | 1993-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05121352-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Summary] [Object] An object of the present invention is to provide a method for manufacturing a semiconductor device capable of obtaining a stable and low contact resistance. In a method of manufacturing a semiconductor device in which a polysilicon film 15 is buried in a contact hole 13 and then a metal film is formed, in a diffusion layer portion of an interlayer insulating film 12 formed on a semiconductor substrate having a diffusion layer 11. A step of forming the contact hole 13 and impurities 14 in the diffusion layer in the contact hole. The above object is achieved by a method of manufacturing a semiconductor device, which comprises the step of introducing |
| priorityDate | 1991-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.