http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05121311-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
filingDate 1991-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d40da29e3d7e95c0073062d27b9f8429
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96adcb53669d63c28be05e8d5435b83f
publicationDate 1993-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05121311-A
titleOfInvention Method of forming resist pattern
abstract (57) [Summary] [Object] A method for forming a resist pattern having a high aspect ratio is intended to suppress migration of the resist pattern due to side etching. [Structure] In a three-layer resist used for forming a resist pattern having a high aspect ratio on a substrate to be processed, a sol produced by hydrolyzing a metal alkoxide in a spin-on glass used as a material for forming an intermediate layer of the resist. A method of forming a resist pattern is characterized by using a mixture of the above as a filler.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016190416-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016159180-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10350791-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6576393-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11524426-B2
priorityDate 1991-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.