Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
filingDate |
1991-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d40da29e3d7e95c0073062d27b9f8429 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96adcb53669d63c28be05e8d5435b83f |
publicationDate |
1993-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-H05121311-A |
titleOfInvention |
Method of forming resist pattern |
abstract |
(57) [Summary] [Object] A method for forming a resist pattern having a high aspect ratio is intended to suppress migration of the resist pattern due to side etching. [Structure] In a three-layer resist used for forming a resist pattern having a high aspect ratio on a substrate to be processed, a sol produced by hydrolyzing a metal alkoxide in a spin-on glass used as a material for forming an intermediate layer of the resist. A method of forming a resist pattern is characterized by using a mixture of the above as a filler. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016190416-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016159180-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10350791-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10974419-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6576393-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11524426-B2 |
priorityDate |
1991-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |