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filingDate 1991-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a516ae9fc851cb721fa338e11f3c36af
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publicationDate 1993-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05117392-A
titleOfInvention Organosilicon polymer and resist composition
abstract (57) [Summary] (Modified) [Purpose] A positive resist which has sufficient oxygen plasma resistance when used as an upper resist of a two-layer structure resist, and has excellent sensitivity and resolution. An organosilicon polymer that can be used for [Structure] The following formula (1): [Si 2 R 1 O 3 ] m [(R 2 ) 3 SiO 1/2 ] n (1) [wherein, m and n are positive integers, and m / n = 90/10 -10/90, R 1 R 2 may be the same or different, and represent C 1 -C 10 alkylene, represented by the following formula (2) and the like. (R 3 represents a lower alkyl group or an aryl group), a lower alkyl group or an aryl group, and at least 20% or more of R 2 is represented by the following formula (3) or the like. (R 3 is the same as defined above), and the weight average molecular weight is 1,000 to 5,0. A resist composition is formed so as to form an organosilicon polymer of 0,000, and further contains the organosilicon polymer, a certain dissolution inhibitor, an onium salt of an acid generator, and an organic solvent.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006225476-A
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