http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05114779-A

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filingDate 1991-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f68e90b48b2db8512167f8c4b087c2e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab6f61062f440721540e4ad8503502b4
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publicationDate 1993-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05114779-A
titleOfInvention Method for manufacturing copper polyimide substrate
abstract (57) [Summary] (Modified) [Purpose] When manufacturing a copper-polyimide substrate in which an intermediate layer of a dissimilar metal such as Ni is formed as a base metal layer on a polyimide resin film, the obtained substrate is exposed to high temperature and high humidity. Does not decrease the adhesion strength between copper and polyimide even if it is exposed to Further, when a wiring board is formed using the substrate, the wiring portion can be formed without adopting a special etching process for removing the intermediate metal layer. [Structure] The surface of a polyimide resin film is made hydrophilic by containing hydrazine hydrate at 1 to 15 mol / l and alkali metal hydroxide at 0.5 to 5 mol / l. After using a 50 ° C. aqueous solution and applying a catalyst, an electroless plating film of Ni, Co or an alloy of these metals is formed on the surface at a thickness of 0.01 to 0.1 μm. The film was applied so that the content of impurities in the film was 10% by weight or less, and the obtained substrate had a maximum attainable temperature in the temperature range of 350 to 540 ° C. and a thermal load coefficient of 0.3. Heat treatment is performed in an inert atmosphere so that the heat treatment is performed in the range of up to 3.5.
priorityDate 1991-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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