http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05110066-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate | 1991-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_362b58d06dc4301a9cd2199d0ad984b4 |
| publicationDate | 1993-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05110066-A |
| titleOfInvention | Quantum wire structure manufacturing method |
| abstract | (57) [Summary] [Objective] To provide a technique for manufacturing a fine quantum wire structure in a self-aligned manner with high accuracy. [Structure] After forming a first SiO 2 film, a first stripe groove 3 penetrating to the Inp substrate 1 is formed by anisotropic etching. After forming the AIN thin film 4 on the entire surface, the portions other than the side wall portions of the first stripe groove 3 are removed by anisotropic etching. Next, after filling the inside of the first stripe groove 3 having the AIN side wall with the second SiO 2 film 5, the upper end of the AIN side wall is exposed by anisotropic etching. Next, the AIN side wall is selectively removed with respect to the surrounding SiO 2 film to form the second stripe groove 6. The first Inp barrier layer 7 and InGaAs are formed in the second stripe groove 6. After the quantum well layer 8 and the second Inp barrier layer 9 are selectively grown, the SiO 2 film is removed, and finally, the Inp layer 10 is embedded to form an InGaAs quantum wire 11. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5514619-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I402897-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0688044-A3 |
| priorityDate | 1991-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.