http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05109911-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 1991-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5029b2bec37564a2c9597b76dbd57007 |
| publicationDate | 1993-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05109911-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | (57) [Summary] [Object] In a semiconductor device in which an interlayer insulating film is flattened by SOG, a V-shaped groove generated when a silicon oxide film is formed is removed to eliminate a void generated when SOG is applied. Improves moisture resistance and reliability. [Structure] After forming a wiring layer 14 of polysilicon or the like, A silicon oxide film 15 formed by a plasma CVD method using organic silicon as a main material is formed, isotropically etched back, and then SOG 16 having a low shrinkage ratio is applied and cured. Further, in some cases, a silicon oxide film 17 is formed by the CVD method to serve as an interlayer insulating film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5698467-A |
| priorityDate | 1991-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.