http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05109910-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1991-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b6d95fa156744907d0505b123b976df http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f390989f2d07779e50f86a66481ca091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c62d75bd54ab1ce72194216e469e2765 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef7704fa31ee569e42b54c39541973b4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4ae8709e6f67094cde20391091944f9 |
| publicationDate | 1993-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05109910-A |
| titleOfInvention | Semiconductor device |
| abstract | (57) [Summary] [Object] To provide a highly reliable semiconductor device in which moisture absorption in an interlayer insulating film is prevented and corrosion of a conductive layer and deterioration of an insulating function of an interlayer insulating film are suppressed. [Structure] In the interlayer insulating film 100, organic silane and oxygen are main components on a hygroscopic silicon oxide film 15 which is chemically vapor-deposited by thermal excitation from a gas phase containing organic silane and ozone as main components. Non-hygroscopic silicon oxide film 16 chemically vapor-deposited from the vapor phase by plasma excitation To a thickness of 200 nm or more. In the contact hole 19, A sidewall 17 made of a silicon oxide film having no hygroscopic property is formed by chemical vapor deposition of a gas phase containing organic silane and oxygen as main components by plasma excitation. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9510172-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8008730-B2 |
| priorityDate | 1991-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.