http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05102273-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3b0a3dbf8d6c9712d86ea1383fd5327
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
filingDate 1991-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81fec074ff3d7b132293b6379a4059e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f36b98f5bf3c98bfe6506fcd4ba7c70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01fd2ae7070ea0e4e3da9336ce45627e
publicationDate 1993-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05102273-A
titleOfInvention Silicon wafer crystal evaluation method
abstract (57) [Summary] [Objective] To provide a silicon wafer crystal evaluation method capable of obtaining knowledge about the distribution of crystal defects in a silicon wafer. [Structure] Different thicknesses of the dry oxide film 2 of the silicon wafer 1, for example, 15 nm, 25 nm, 35 nm, 50 n The B-mode defect rate corresponding to the film thickness of m is obtained, and the defect density of the silicon wafer 1 is obtained from the B-mode defect rate and the film thickness of the dry oxide film 2. Next, the B-mode defect rate is differentiated by the film thickness of the dry oxide film 2 to obtain the volume defect density of the silicon wafer 1. Next, the volume defect density and the film thickness of the dry oxide film 2 are graphed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018041830-A
priorityDate 1991-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123

Total number of triples: 16.