http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05102053-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a07d0b3e3169dd026ecd9113fc9cc4ad |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3228 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 |
| filingDate | 1991-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f13b01dd6abb24551c27f04a65e885a2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6f97eb6c17c71cbd0f527df1a383927 |
| publicationDate | 1993-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05102053-A |
| titleOfInvention | Compound semiconductor wafer and method of manufacturing the same |
| abstract | (57) [Summary] [Objective] The single crystallization rate is high and the dislocation density is low by making semi-insulating at the wafer stage rather than semi-insulating at the crystal growing stage. [Constitution] An InP crystal is grown by the LEC method without any addition. A wafer is cut out from this crystal. The wafer at this time has low resistance. The wafer whose surface is mirror-polished is immersed in a nitric acid solution in which Fe is dissolved, washed with water, and dried with a spinner. This wafer is heat-treated so that Fe is contained in the crystal. To diffuse heat. The resistance of the surface of this wafer and the surface of the wafer not subjected to the Fe diffusion treatment is low and does not show semi-insulating property in the wafer not subjected to the Fe diffusion treatment, and the solution concentration is 1 ppm or more in the wafer subjected to the Fe diffusion treatment. The resistance is greatly increased and becomes semi-insulating. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9714181-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004179630-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5846122-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0739686-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0739686-A2 |
| priorityDate | 1991-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23969 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419548998 |
Total number of triples: 20.