http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0492453-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate | 1990-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b59c52640623dedfc370d9bdf46704ee |
| publicationDate | 1992-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0492453-A |
| titleOfInvention | Semiconductor device |
| abstract | PURPOSE: To completely eliminate an exfoliation and a crack due to the shortage of a close contact propery and to prevent the delay of a device by a method wherein at least one layer out of a plasma nitride film, a thermal nitride film and an oxynitride film is formed and at least one or more layers out of an SiO 2 film, a BPSG film and a PSG film are formed. n CONSTITUTION: After a contact etching operation, a TiN film 110 as a barrier metal is formed in 1000Å by a reactive sputtering operation. A layer containing O 2 is formed as a surface layer by using an O 2 plasma; and a barrier property is enhanced. Then, Pt/Ti as metals for plating use are formed in 1000Å/200Å by a sputtering operation; and parts other than a wiring part are patterned by using a resist. In succession, an Au-electroplated layer 111 is formed in 1.0μ; the resist is stripped; and after that, the substratum barrier metal is removed by an ion sealing operation by making use of the Au-electroplated layer as a mask. Then, a nitride film 112 is formed in 1000Å in a plasma composed mainly of NH 3 and SiH 4 ; after that, a plasma TEOS film is formed in 1.0μ. In addition, an SOG is coated in 1000Å; it is sintered at 500°C; after that, a hole etching operation is executed; and second-layer wiring is formed. n COPYRIGHT: (C)1992,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5986330-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5633534-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5837613-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-RE39690-E http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6284584-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007250792-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6107194-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6514811-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5795821-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5627403-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5793114-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6051864-A |
| priorityDate | 1990-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.