http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0465142-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R1-073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
filingDate 1990-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_569c3dfc8ce0ade3bdcd782f8a3c5cae
publicationDate 1992-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0465142-A
titleOfInvention Manufacture of semiconductor element
abstract PURPOSE: To judge whether a semiconductor element is good or not without touching an electrode part inside the semiconductor element by constituting that an electrode which is equal to the electrode inside the semiconductor element is arranged in a separation region of the semiconductor element. n CONSTITUTION: A semiconductor-element circuit part 2 is formed on a silicon wafer 1; and after that, an insulator 3 for electrical isolation use is formed between electrode parts 4 and the semiconductor-element circuit part 2. The insulator 3 is extended up to a separation region 5 of a semiconductor element. After the insulator 3 is formed, the electrode parts 4 are formed. At this time, the electrode parts 4 are extended up to the region 5 and have a structure which is equal to electrode parts 4 formed inside the semiconductor element. In this state, it is judged whether the semiconductor element is good or not by using the electrode parts 4 arranged in the region 5. n COPYRIGHT: (C)1992,JPO&Japio
priorityDate 1990-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123

Total number of triples: 14.