http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0456773-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 |
| filingDate | 1990-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99d178f629e8b7d39e8617e9563b881f |
| publicationDate | 1992-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0456773-A |
| titleOfInvention | Plasma cvd device |
| abstract | PURPOSE: To form a high-quality thin film excellent in adhesion by generating a plasma discharge region having an optimum density for exciting and decomposing the raw gases for each raw gas. n CONSTITUTION: When a TiCN film is formed, a supply system 7, nozzle 3 and mesh electrode 5 are provided for each of the raw gases such as TiCl 4 , NH 3 and CH 4 , and an optimum high-frequency power for exciting and decomposing each gas is supplied from the respective high-frequency power sources 9. The raw gas is blown off from the blowoff port 4 of the nozzle 3, excited and decomposed in the plasma discharge region, and the positive ion necessary to form a thin film is strongly attracted by a substrate 6 which is heated to an appropriate temp. by a heater (not shown in the figure) provided at the bottom of a holder 2, etc., and provided with a negative potential by a DC power source 8. Consequently, a high-quality thin film excellent in adhesion is formed on the substrate 6 by the bonding of the ions. n COPYRIGHT: (C)1992,JPO&Japio |
| priorityDate | 1990-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 14.