http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H045563-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J49-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J49-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J47-12 |
| filingDate | 1990-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_995fa062d825099d65d54703afc9befd |
| publicationDate | 1992-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H045563-A |
| titleOfInvention | Method and apparatus for analyzing impurity on semiconductor wafer surface |
| abstract | PURPOSE: To make mass analysis and to identify an impurity by heating a wafer after dropping HCl onto the wafer to convert the impurity to a chloride and evaporating the excess HCl, then rapidly increasing the temp. of the wafer to evaporate the chloride and ionizing the vapor with a plasma torch. n CONSTITUTION: The HCl 11 is dropped from a pipette 7 onto the wafer 6 in a hermetic vessel 2 to convert the impurity to the chloride. A voltage is impressed to electrodes 4, 4' to heat a carbon board 5 and to evaporate the excess HCl. Gaseous Ar is supplied from an inlet 9 of a cap 3 and the HCl is discharged together with the Ar from the outlet 10. The energization quantity is then increased to heat the wafer to ≥1,000°C and to evaporate the chloride. The vapor thereof is taken out of the outlet. The gaseous chloride is passed through the plasma torch 13 by which the gas is ionized. The ions past a skimmer cone 14 and a sample cone 15 are collected and the pressure thereof is reduced in a discharge system. The ions are then introduced into a mass analysis section 16. The measured value obtd. by the mass analysis is processed by a computer 17 to identify the impurity element. The impurity on the wafer is rapidly analyzed by this method. n COPYRIGHT: (C)1992,JPO&Japio |
| priorityDate | 1990-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.