http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0448641-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 |
| filingDate | 1990-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_755ff01bd2810b93dbef529c90b20476 |
| publicationDate | 1992-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0448641-A |
| titleOfInvention | Compound semiconductor device |
| abstract | PURPOSE: To realize a FET of its thermal characteristic being stable and its source resistance being uniform, by providing sulfide layers comprising gallium sulfide and/or arsenic sulfide on at least partial regions of the surfaces of a compound semiconductor substrate between a source and gate electrode and between the gate and a drain electrode. n CONSTITUTION: Sulfide layers 9 comprising gallium sulfide and arsenic sulfide are formed between a source and gate electrode 5, 8 and between the gate and a drain electrode 8, 6. An insulation film 10 (an SiN film for protecting a surface) is formed thereon. These sulfide layers 9 can be formed simply by applying ammonium sulfide to the GaAs substrate 1 or dipping the GaAs substrate 1 into the aqueous solution of ammonium sulfide prior to forming the insulation film 10. Thereafter, by cleaning the GaAs substrate l with flowing water, excessive ammonium sulfide is removable, and the sulfide layers 9 comprising gallium sulfide and arcenic sulfide of monoatomic layer can be formed on the surface of the GaAs substrate 1. These sulfide layers 9 are very stable thermally and are very stable for oxidizing too. n COPYRIGHT: (C)1992,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6207976-B1 |
| priorityDate | 1990-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.