http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0442562-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f187eb8cb31e70d4acd428dd8beedd4f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate | 1990-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0e64e58e69bdd1755d981516785d2d1 |
| publicationDate | 1992-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0442562-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE: To manufacture a semiconductor device which makes it possible to easily for air-bridge wiring without the necessity of precisely controlling various parameters by using the first resist for exposing the upper part of column zone using the second resist for forming a mask pattern for wire of the upper layer. n CONSTITUTION: The first resist 16 is coated with the thickness of approximately 2 to 5μm by spin coating. Reactive ion etching with the use of O 2 plasma is applied to the first resist 16, so that that upper part of column zone 14 may be exposed with prescribed quantity. Then, a SiN film 18 is formed, as a thin film, on the surface of first resist 16 by the means of plasma making film, which employs electronic cyclotron resonance. After the formation of the SiN film 18, the second resist 19 is applied on the SiN film 18, and a groove 20 for wiring of the upper layer is formed in the region positioned in the upper part of the column zone 14 of the second resist 19. After the groove 20 in reverse tapered condition is formed in this way, the SiN film 18 existing in the groove 20 is removed by etching with the use of hydrofluoric acid, e.g. Then, wire of the upper layer 22 is installed in the groove 20. n COPYRIGHT: (C)1992,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6297145-B1 |
| priorityDate | 1990-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457280313 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14917 |
Total number of triples: 14.