http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H043965-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate | 1990-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19ab67dff5ab20b95f020a82eef8efa6 |
| publicationDate | 1992-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H043965-A |
| titleOfInvention | Wiring formation |
| abstract | PURPOSE: To improve the efficiency of filling a contact hole opened in an interlayer insulating film on a substrate with aluminum through bias ECR plasma CVD using conditions whereby deposition rate is equalized to etching rate at the shoulder of a connection hole. n CONSTITUTION: In the case where CVD advances, first an aluminum wiring layer 4A fills a connection hole 3 while piling on an interlayer insulating film 2, so that deposition rate and etching rate attain an equality at shoulders D, E of the contact hole 3. Advancement of a following CVD allows the aluminum wiring layer 4A to fill the connection hole 3 completely while piling on the interlayer insulating film 2 with the result that the aluminum wiring layer 3A are separated at the shoulders D, E of the contact hole 3 on the interlayer insulating film 2. Advancement of a further CVD allows the aluminum wiring layer 4A to pile on the aluminum wiring 4A which fills the contact hole 3 to backfill that part of the aluminum wiring layer 4A which has been separated on the interlayer insulating film 2 finally into a flat aluminum wiring layer 4A. n COPYRIGHT: (C)1992,JPO&Japio |
| priorityDate | 1990-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359268 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419491804 |
Total number of triples: 14.