http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04372149-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0658 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 1991-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2aac427ead2ea62582c19d30f4d5d62a |
| publicationDate | 1992-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H04372149-A |
| titleOfInvention | Semiconductor integrated circuit |
| abstract | PURPOSE: To recognize a semiconductor integrated circuit chip in which a pinhole occurs under power source wirings, as a defective product during manufacturing steps. n CONSTITUTION: In a high withstand voltage bipolar LSI, a silicon nitride film 11 to be used as a capacity insulating film, is removed only at a part under power source wirings 13 in a second contact step. Even if an interlayer film 5 under the wirings is etched due to certain reason so that a pinhole occurs, a thin nitride film 11/thin oxide film 10 structure is eliminated. A withstand voltage of the pinhole is reduced, and a boundary between the thin nitride film and the thin oxide film in which carrier is easily stored, is eliminated. If the pinhole exists under the wirings, it is recognized as being a defective product in an inspecting step of the manufacturing steps. n COPYRIGHT: (C)1992,JPO&Japio |
| priorityDate | 1991-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.