| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate |
1991-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03b692c5dcb8bb114ad3e23499d93c9a |
| publicationDate |
1992-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H04369849-A |
| titleOfInvention |
Semiconductor integrated circuit device |
| abstract |
PURPOSE: To enable the potential of wirings located lower than the uppermost wiring to be measured as accurately as in the case of the uppermost wiring. n CONSTITUTION: The potential of an aluminum wiring 2 located under an oxide film 5 is measured through such a manner that the aluminum wiring 2 is connected to the dummy pad 8 formed of the uppermost aluminum wiring through the intermediary of a dummy through-hole 9. n COPYRIGHT: (C)1992,JPO&Japio |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6610918-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6444895-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6759259-B2 |
| priorityDate |
1991-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |