http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04368168-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 1991-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eacbf00077c74f41ee80c17fa79a7101 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0220a6378a47e3966516371e685c904f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_036ef80d7cb629b1afc8eeb8393c7934 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96c607535c1e76806a94b92731ee9358 |
| publicationDate | 1992-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H04368168-A |
| titleOfInvention | Dielectric thin film and manufacture thereof |
| abstract | PURPOSE: To stably form a high dielectric material layer with good controlability on the greater part of a dielectric material film by forming a part near the surface of a solid state thin film with three elements of Ti, Si and O and forming a part near a substrate mainly with two elements of Si and O and also forming a dielectric material thin film of non-crystal condition. n CONSTITUTION: Titanium halogenide such as TiCl 4 used as a raw material gas is ionized by plasma decomposition on the surface layer 12 of SiO 2 , accelerated ions including Ti are implanted to keep high quality Sin. in the depth near a substrate of the SiO 2 thin film 12. SiTiO film 13 is formed from the surface to the depth near the substrate and an electrode 14 is then formed. Thereby, a capacitor having a high capacitance value and a low leak current can be realized. n COPYRIGHT: (C)1992,JPO&Japio |
| priorityDate | 1991-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.