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filingDate 1991-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b9aeb36bb45d6a4349fd601bc1ddd40
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publicationDate 1992-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H04354382-A
titleOfInvention Surface treatment method for gap light emitting element chip
abstract PURPOSE: To improve efficiency of light acquiring of a GaP light emitting element chip and to remove processing damage (dicing distortion) well simultaneously. n CONSTITUTION: After a rough surface is formed by etching a surface of a GaP light emitting element chip by hydrochloric acid, it is etched by mixed solution consisting of sulfuric acid, hydrogen peroxide and water and is lastly etched by hydrochloric acid. n COPYRIGHT: (C)1992,JPO&Japio
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006324507-A
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Total number of triples: 35.