http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04352378-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate | 1991-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_037e44d78a4118dc733c6338cfaf5739 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a020bc86d2804e4b8e8a5c763772a44c |
| publicationDate | 1992-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H04352378-A |
| titleOfInvention | Semiconductor laser device |
| abstract | PURPOSE: To obtain a small-sized semiconductor laser device wherein a semiconductor laser chip and an IC chip for high-frequency superposition use have been assembled. n CONSTITUTION: A semiconductor laser chip 1 and an IC chip 3 for high-frequency superposition use are integrated to form an integrated circuit; the integrated circuit is housed inside a cap material 9 in which a window glass 7 has been formed; an ITO(indium-tin oxide) film is formed on the inside face of the window glass 7; and it is prevented that electromagnetic waves 6 discharged from the IC chip 3 for high-frequency superposition use are leaked to the outside of the cap material 9. n COPYRIGHT: (C)1992,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006295081-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7177331-B2 |
| priorityDate | 1991-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID447604988 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID57350325 |
Total number of triples: 16.