http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04318852-A

Outgoing Links

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
filingDate 1991-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f63a3856cedfb6d8917d3e719ad5b1d3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_904f682665e9472adf4d4924ccf3dd63
publicationDate 1992-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H04318852-A
titleOfInvention Resist pattern forming method
abstract PURPOSE: To obtain a resist pattern high in precision by eliminating an effect of exposure fog due to scattered electrons at the time of electron beam exposure in the manufacture process of a reticle method. n CONSTITUTION: An about 1000Å thick chromium film is attached to the surface of a quartz glass plate to form a substrate 1, a positive type electron beam resist film 11 made of polymethyl methacrylate of about 5000Å thickness, exposed to electron beams with an acceleration voltage of 20kV, the surface layer of the film 11 is removed by the plasma ashing method with a mixture of O 2 and Cl 2 , and the film 11 is developed to form a resist pattern 12, or it is formed by forming a negative type electron beam resist film, such as a 5000Å thick chloromethylated polystyrene on the substrate 1, exposing it to electron beams, further exposing it to ultraviolet rays, and developing the negative resist film. n COPYRIGHT: (C)1992,JPO&Japio
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010181872-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100376890-B1
priorityDate 1991-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 19.