http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0429319-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_01c1e0bc0628f76dea731cda5a666ca1 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate | 1990-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b18eaf7d11e7eafcd11c5b51ecac0e10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64dd235aa76114d7a0f459aec5305ccf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7ec0b4dd4890e9bf7d1ffd840e594e6 |
| publicationDate | 1992-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0429319-A |
| titleOfInvention | Semiconductor element and its manufacture |
| abstract | PURPOSE: To prevent shortcircuit between upper and lower wiring electrodes and generation of a leak due to penetration of water and to improve electromigration resistance by providing a plasma insulating film which is formed by plasma-treatment of a surface of an insulating film layer. n CONSTITUTION: Plasma insulating films 22, 26 are provided which are formed by performing plasma treatment for a surface of an insulating film layer 20. That is, a semiconductor element is formed performing plasma treatment for a surface of the insulating film layer 20 after the insulating film layer 20 is formed by plasma CVD method, sputtering method, vacuum deposition method, etc., to cover an electrode or a wiring. As the insulating film layer 20, an inorganic insulating material such as silicon, titanium, tantalum oxide, nitride, carbide or a mixture thereof can be used. Thereby, it is possible to prevent shortcircuit among upper electrode and lower electrode 14, 16, 18 of a matrix wiring and generation of a leak due to penetration of water and to improve electromigration resistance. n COPYRIGHT: (C)1992,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6048764-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7731338-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9593405-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2006126536-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014524974-A |
| priorityDate | 1990-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.